Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3259379
Reference20 articles.
1. GaN electronics for high power, high temperature applications
2. Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor
3. Bulk GaN crystals grown at high pressure as substrates for blue-laser technology
4. Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy
5. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
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