Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon-Reference-Cited by-同舟云学术

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

Published:2021-01-25 Issue:2 Volume:3 Page:813-824
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Ghosh Saptarsi¹^ORCID,Hinz Alexander¹^ORCID,Fairclough Simon M.¹,Spiridon Bogdan F.¹,Eblabla Abdalla²,Casbon Michael A.²,Kappers Menno J.¹,Elgaid Khaled²,Alam Saiful²,Oliver Rachel A.¹^ORCID,Wallis David J.¹²

Affiliation:

1. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, United Kingdom

2. Centre for High Frequency Engineering, University of Cardiff, Cardiff CF24 3AA, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

http://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00966

Reference69 articles.

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4. Barrier-Layer Scaling of InAlN/GaN HEMTs

5. Achieving high electron mobility in AlInGaN/GaN heterostructures: The correlation between thermodynamic stability and electron transport properties

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