Morphology transformations of GaAs high‐index surfaces during the initial stages of strained‐layer overgrowth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108662
Reference5 articles.
1. Molecular beam epitaxial growth of GaAs and other compound semiconductors
2. Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces
3. Topography of high- and low-index GaAs surfaces
4. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
5. Formation and morphology of InAs/GaAs heterointerfaces
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1. Self-ordering of InAs nanostructures on (631)A/B GaAs substrates;Japanese Journal of Applied Physics;2018-01-17
2. InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates;Physica E: Low-dimensional Systems and Nanostructures;2018-01
3. Surface dynamics during molecular-beam epitaxy of (In,Ga)As onGaAs(331)B: Formation of quantum wires with low In content;Physical Review B;2005-04-18
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