Accurate modeling of direct tunneling hole current in p-metal–oxide–semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1495084
Reference17 articles.
1. Polarity dependent gate tunneling currents in dual-gate CMOSFETs
2. Submicron transferred-substrate heterojunction bipolar transistors
3. Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling
4. A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides
5. Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices
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