Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference40 articles.
1. CMOS scaling into the nanometer regime
2. Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-Å gate oxide MOSFETs
3. Self‐consistent modeling of accumulation layers and tunneling currents through very thin oxides
4. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
5. Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide
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