Thin dielectric degradation during silicon selective epitaxial growth process-Reference-Cited by-同舟云学术

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Thin dielectric degradation during silicon selective epitaxial growth process

Published:1995-10-02 Issue:14 Volume:67 Page:2040-2042
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shih Yang‐Chin,Zhang Guobiao,Hu Chenming,Oldham William G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.115071

Reference13 articles.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective epitaxial growth of 4H-SiC at reduced temperatures using halo-carbon precursor;Applied Physics Letters;2006-12-25

2. Control of nitrogen depth profile in ultrathin oxynitride films formed by pulse-time-modulated nitrogen beams;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-03

3. Ultrathin Oxynitride Films Formed by Using Pulse-Time-Modulated Nitrogen Beams;Japanese Journal of Applied Physics;2003-07-15

4. Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films;Applied Physics Letters;1998-10-05

5. Optimization of Process Conditions for Selective Silicon Epitaxy Using Disilane, Hydrogen, and Chlorine;Journal of The Electrochemical Society;1997-09-01

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