Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122338
Reference17 articles.
1. Electrical breakdown induced by silicon nitride roughness in thin oxide–nitride–oxide films
2. High-Performance Superthin Oxide/Nitride/Oxide Stacked Dielectrics Formed by Low-Pressure Oxidation of Ultrathin Nitride
3. Conduction mechanism of oxide-nitride-oxide film formed on the rough polycrystalline silicon surface
4. Numerical analysis for conduction mechanism of thin oxide-nitride-oxide films formed on rough poly-Si
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Sequential thermal treatments of SiC in NO and O2: Atomic transport and electrical characteristics;Applied Physics Letters;2007-07-23
2. Atomic transport during growth of ultrathin dielectrics on silicon;Surface Science Reports;1999-12
3. Effects of the Final Oxidation Step on N and O Distributions in Silicon Oxide/Nitride/Oxide Ultrathin Films;Journal of The Electrochemical Society;1999-10-01
4. Sub-Nanometric Resolution Depth Profiling of Ultrathin Ono Structures;MRS Proceedings;1999
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