Conduction mechanism of oxide-nitride-oxide film formed on the rough polycrystalline silicon surface-Reference-Cited by-同舟云学术

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Conduction mechanism of oxide-nitride-oxide film formed on the rough polycrystalline silicon surface

Published:1996-03 Issue:3 Volume:39 Page:337-342
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Matsuo Naoto,Sasaki Akio

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. VLSI Tech. Dig. Symp.;Wakamiya,1989

2. Ext. Abst. Int. Conf. on Solid St. Devices and Materials;Matsuo,1991

3. Ext. Abst. Int. Conf. on Solid St. Devices and Materials;Mine,1989

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trap-state density in continuous-wave laser-crystallized single-grainlike silicon transistors;Applied Physics Letters;2006-06-05

2. Control of nitrogen depth profile in ultrathin oxynitride films formed by pulse-time-modulated nitrogen beams;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-03

3. Evolution of Surface Topography of as-Grown Si Films near Amorphous-to-Polycrystalline Transition;Journal of The Electrochemical Society;2004

4. Ultrathin Oxynitride Films Formed by Using Pulse-Time-Modulated Nitrogen Beams;Japanese Journal of Applied Physics;2003-07-15

5. Electrical/thermal properties of nonplanar polyoxides and the consequent effects for EEPROM cell operation;IEEE Transactions on Electron Devices;2000-06

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