The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123176
Reference10 articles.
1. Heterojunction bipolar transistors using Si-Ge alloys
2. Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure
3. Two‐dimensional hole gas in Si/Si0.85Ge0.15/Si modulation‐doped double heterostructures
4. Synthesis of SiGe and SiGeC alloys formed by Ge and C implantation
5. Submicron Si1−xGex/Si epitaxial structure formation by wet oxidation of amorphous Si‐Ge layers
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