Synthesis of SiGe and SiGeC alloys formed by Ge and C implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.117620
Reference16 articles.
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Laser Annealing of Amorphous Germanium on Silicon–Germanium Source/Drain for Strain and Performance Enhancement in pMOSFETs;IEEE Electron Device Letters;2008-08
2. Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing;Journal of Applied Physics;2007-11
3. Strain compensation in boron-indium coimplanted laser thermal processed silicon;Journal of Applied Physics;2005-05
4. ELECTRICAL PROPERTIES OF Si1-X-YGeXCY FILMS GROWN BY ION IMPLANTATION AND SOLID PHASE EPITAXY;International Journal of Modern Physics B;2002-11-20
5. RBS-study of Ge xSi1-x Compounds Formed by Variable Dose Ge Implantation into Si Wafers;Materials Research;2002-06
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