Strain-driven phase manipulation of α- and κ-Ga2O3 by nanoepitaxial lateral overgrowth on embedded α-In2O3 submicron dots-Reference-Cited by-同舟云学术

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Strain-driven phase manipulation of α- and κ-Ga2O3 by nanoepitaxial lateral overgrowth on embedded α-In2O3 submicron dots

Published:2021-11-01 Issue:18 Volume:119 Page:182102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kuang Y.¹^ORCID,Ma T. C.¹,Chen X. H.¹^ORCID,Hao J. G.¹,Ren F.-F.¹^ORCID,Gu S. L.¹,Zhang R.¹,Zheng Y. D.¹,Ye J. D.¹^ORCID

Affiliation:

1. School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China

Funder

National Natural Science Foundation of China

The State Key R&D Project of Jiangsu, China

The State Key R&D Project of Guangdong, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0068813

Reference30 articles.

1. High-κ dielectric ε-Ga2O3 stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure

2. Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

3. Band Alignment and Enhanced Interfacial Conductivity Manipulated by Polarization in a Surfactant-Mediated Grown κ-Ga2O3/In2O3 Heterostructure

4. Group-III Sesquioxides: Growth, Physical Properties and Devices

5. On the origin of dislocation generation and annihilation in α-Ga2O3 epilayers on sapphire

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1. Step-edge-guided nucleation and growth mode transition of α-Ga₂O₃ heteroepitaxy on vicinal sapphire;Chinese Physics B;2024-07-01

2. High performance solar blind avalanche photodetector based on a single-crystalline ɛ-Ga2O3/BaSnO3 heterojunction;Materials Today Physics;2024-03

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