Author:
Yang Moon Young,Kamiya Katsumasa,Shiraishi Kenji
Subject
General Physics and Astronomy
Reference32 articles.
1. Making silicon nitride film a viable gate dielectric
2. S. C. Song, H. F. Luan, Y. Y. Chen, M. Gardner, J. Fulford, M. Allen, and D. L. Kwong, IEDM Tech. Dig., 1998, P. 373.
3. B. Yu, H. Wang, Q. Xiang, J. X. An, J. Jeon, and M.R. Lin, Dig. Tech. Pap. Symp. VLSI Technology, 2001, p. 9.
4. Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric
5. Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation
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