Photoluminescence investigation of the band around 1.41 eV in heatedn‐GaAs samples
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325254
Reference17 articles.
1. GaAs FET Prepared with Molecular Beam Epitaxial Films
2. GaAs FET Prepared with Molecular Beam Epitaxial Films
3. Effect of doping on degradation of GaAs–AlxGa1−xAs injection lasers
4. EFFECT OF ARSENIC PRESSURE ON HEAT TREATMENT OF LIQUID EPITAXIAL GaAs
5. Photoluminescence studies of vacancies and vacancy-impurity complexes in annealed GaAs
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