Effect of doping on degradation of GaAs–AlxGa1−xAs injection lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655068
Reference16 articles.
1. Gradual degradation of GaAs double-heterostructure lasers
2. Degradation of CW GaAs double-heterojunction lasers at 300 K
3. Strain‐induced degradation of GaAs injection lasers
4. Continuous operation of GaAs–Ga1 −xAlxAs double‐heterostructure lasers with 30 °C half‐lives exceeding 1000 h
5. Degradation characteristics of cw optically pumped AlxGa1−xAs heterostructure lasers
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2. Intrinsic bistability in the electroluminescence spectrum and current-voltage characteristics of triple-barrier p-i-n resonant tunneling devices;Surface Science;1994-03
3. X‐ray laser gain from Bragg reflection coupling in channeled relativistic beam systems;Applied Physics Letters;1988-03-14
4. Degradation of light-emitting diodes (Review);Journal of Applied Spectroscopy;1980-11
5. Photoluminescence investigation of the band around 1.41 eV in heatedn‐GaAs samples;Journal of Applied Physics;1978-06
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