Trap generation and electron detrapping in SiO2during high‐field stressing of metal‐oxide‐semiconductor structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94709
Reference9 articles.
1. Dielectric breakdown in electrically stressed thin films of thermal SiO2
2. High‐field electron trapping in SiO2
3. Behavior of the Si/SiO2interface observed by Fowler‐Nordheim tunneling
4. Determination of insulator bulk trapped charge densities and centroids from photocurrent‐voltage charactersitcs of MOS structures
5. Limitations upon photoinjection studies of charge distributions close to interfaces in MOS capacitors
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