Gallium nitride tunneling field-effect transistors exploiting polarization fields-Reference-Cited by-同舟云学术

Gallium nitride tunneling field-effect transistors exploiting polarization fields

Published:2020-02-18 Issue:7 Volume:116 Page:073502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chaney Alexander¹^ORCID,Turski Henryk²^ORCID,Nomoto Kazuki¹,Hu Zongyang¹^ORCID,Encomendero Jimy¹^ORCID,Rouvimov Sergei³,Orlova Tatyana³,Fay Patrick³^ORCID,Seabaugh Alan³^ORCID,Xing Huili Grace¹⁴^ORCID,Jena Debdeep¹⁴^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

2. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, PL-01-142 Warsaw, Poland

3. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA

4. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA

Funder

NSF

Homing Project

Defense Advanced Research Projects Agency

Microelectronics Advanced Research Corporation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5132329

Reference34 articles.

1. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

2. Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications

3. CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With $\leq 50$-mV/decade Subthreshold Swing

4. (Invited) Ultrathin-Body Ge-on-Insulator MOSFET and TFET Technologies

5. Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires

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