Subthreshold electron velocity‐field characteristics of GaAs and In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335464
Reference17 articles.
1. Measurement of the Γ‐L separation in Ga0.47In0.53As by ultraviolet photoemission
2. Velocity‐field characteristics of Ga1−xInxP1−yAsyquaternary alloys
3. Alloy scattering and high field transport in ternary and quaternary III–V semiconductors
4. Liquid Phase Epitaxial Growth, Electron Mobility and Maximum Drift Velocity of In1-xGaxAs (x\cong0.5) for Microwave Devices
5. Transferred-electron effect in In0.53Ga0.47As
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