Effect of compressive stress on silicon bipolar devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1661893
Reference20 articles.
1. Resistance of Elastically Deformed Shallow p‐n Junctions
2. Correspondence
3. Measurement of Strains at Si‐SiO2 Interface
4. RESIDUAL STRESSES AT AN OXIDE‐SILICON INTERFACE
5. Residual Stresses in Thin Single Crystals Bonded to an Amorphous Substrate: Silicon‐Integrated Circuits
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