Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges-Reference-Cited by-同舟云学术

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Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

Published:2017-05-08 Issue:19 Volume:110 Page:192107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee In-Hwan¹,Polyakov A. Y.²,Smirnov N. B.²,Zinovyev R. A.²^ORCID,Bae Kang-Bin¹,Chung Tae-Hoon³,Hwang Sung-Min⁴,Baek J. H.³,Pearton S. J.⁵^ORCID

Affiliation:

1. School of Materials Science and Engineering, Korea University, Seoul 02841, South Korea

2. National University of Science and Technology MISiS, Moscow, Leninskiy pr. 4, Moscow 119049, Russia

3. Korea Photonics Technology Institute, Gwangju 500-779, South Korea

4. Soft-Epi Inc., Opo-ro 240, Gwangju-si, Gyeonggi-do 464-892, South Korea

5. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4983556

Reference25 articles.

1. Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

2. Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W

3. Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range

4. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

5. Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

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3. Fast Neutron Irradiation on GaN-Based Light-Emitting Diodes From Near-Ultraviolet to Green Spectral Ranges;IEEE Transactions on Nuclear Science;2023-04

4. Trap analysis on Pt-AlGaN/GaN Schottky barrier diode through deep level transient spectroscopy;Journal of Semiconductors;2023-04-01

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