Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications-Reference-Cited by-同舟云学术

Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

Published:2017-02-16 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Shen Chao¹,Ng Tien Khee¹,Lee Changmin²,Leonard John T.²,Nakamura Shuji²,Speck James S.²,Denbaars Steven P.²,Alyamani Ahmed Y.³,El-Desouki Munir M.³,Ooi Boon S.¹

Affiliation:

1. King Abdullah Univ. of Science and Technology (Saudi Arabia)

2. Univ. of California, Santa Barbara (United States)

3. King Abdulaziz City for Science and Technology (Saudi Arabia)

Publisher

SPIE

Reference34 articles.

1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

2. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

3. Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth

4. Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing

5. Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs

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