Numerical simulation of tunneling current in GaN Schottky diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2734104
Reference17 articles.
1. Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
2. Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy
3. Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N∕GaN grown by molecular-beam epitaxy
4. Examination of tunnel junctions in the AlGaN/GaN system: Consequences of polarization charge
5. Current–voltage characteristics of polar heterostructure junctions
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