Cathodoluminescence investigations of GaInNAs on GaAs(111)B
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2398919
Reference16 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. GaAsN and GaInAsN/GaAs quantum wells grown on substrates: growth conditions and optical properties
3. Effect of nitrogen on the optical properties of InGaAsN p-i-n structures grown on misoriented (111)B GaAs substrates
4. Influence of localization on the carrier diffusion inGaAs∕(Al,Ga)Asand(In,Ga)(As,N)∕GaAsquantum wells: A comparative study
5. Strain-generated electric fields in [111] growth axis strained-layer superlattices
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1. Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence;Materials;2018-06-20
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