GaAsN and GaInAsN/GaAs quantum wells grown on substrates: growth conditions and optical properties
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference1 articles.
1. Band-gap energies, free carrier effects, and phonon modes in strained GaNAs/GaAs and GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry
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1. Effect of substrate orientation on band structure of bulk III-V semiconductors;AIP Advances;2022-11-01
2. Orientation dependence of electronic structure and optical gain of (11N)-oriented III-V-N quantum wells;Journal of Applied Physics;2013-02-28
3. The comparison of the band alignment of GaInAsN quantum wells on GaAs and InP substrates for (001) and (111) orientations;Physica E: Low-dimensional Systems and Nanostructures;2011-02
4. Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations;The European Physical Journal B;2009-05
5. InAsN/GaSb/InAsN ‘W’ quantum well laser for mid-infrared emission: from electronic structure to threshold current density calculations;Journal of Physics D: Applied Physics;2008-10-14
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