Solid phase epitaxy of silicon on gallium phosphide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94761
Reference5 articles.
1. Recent developments in silicon molecular beam epitaxy
2. Polar‐on‐nonpolar epitaxy: Sublattice ordering in the nucleation and growth of GaP on Si(211) surfaces
3. Silicon molecular beam epitaxy on gallium phosphide
4. Growth of dislocation-free gallium-phosphide crystals from a stoichiometric melt
5. Growth of dislocation-free gallium-phosphide crystals from a stoichiometric melt
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1. Contact bonding, including direct-bonding in a historical and recent context of materials science and technology, physics and chemistry;Materials Science and Engineering: R: Reports;2002-04
2. Present status of solid phase epitaxy of vacuum-deposited silicon;Journal of Crystal Growth;1989-11
3. RHEED Studies of Growing Ge and Si Surfaces;NATO ASI Series;1988
4. GexSi1−x/Si Heterostructures: Physics and Device Applications;MRS Proceedings;1987
5. Molecular‐beam epitaxy of Si on a CaF2/Si (100) structure;Journal of Applied Physics;1986-05
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