Growth of dislocation-free gallium-phosphide crystals from a stoichiometric melt
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. A Technique for Pulling Single Crystals of Volatile Materials
2. Pulling of gallium phosphide crystals by liquid encapsulation
3. Liquid encapsulation crystal pulling at high pressures
4. Properties of GaP Single Crystals Grown by Liquid Encapsulated Pulling
5. Defect Studies of GaP Crystals Pulled from Nonstoichiometric Melts: Dislocation and ``Saucer'' Etch Pits
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dynamic activity of dislocations in gallium phosphide;Journal of Applied Physics;1993-02-15
2. Deformation behaviour of single crystals of GaP in uniaxial compression;Crystal Research and Technology;1989-07
3. Mechanical properties and dislocation dynamics of GaP;Journal of Materials Research;1989-04
4. Growth and defects of In-doped LEC GaP crystals;Journal of Crystal Growth;1989-02
5. Synthesis and single crystal growth of gallium phosphide by the liquid encapsulated vertical Bridgman technique;Bulletin of Materials Science;1988-12
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