Cr gettering by Ne ion implantation and the correlation with the electrical activation of implanted Si in semi‐insulating GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330529
Reference10 articles.
1. Chromium profiles in semi‐insulating GaAs after annealing with a Si3N4encapsulant
2. Implantation of shallow impurities in Cr‐doped semi‐insulating GaAs
3. Effects of Cr redistribution on electrical characteristics of ion-implanted semi-insulating GaAs
4. Chromium redistribution during thermal annealing of semi‐insulating GaAs as a function of encapsulant and implant fluence
5. Front surface control of Cr redistribution and formation of stable Cr depletion channels in GaAs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Depth Distribution of the Gettered Au Atoms Measured by Means of RBS and Radioactive Methods;Physica Status Solidi (a);1989-03-16
2. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
3. Diffusion of chromium in gallium arsenide;Journal of Applied Physics;1986-04
4. Au gettering by Ne and Ar implantation in silicon;Applied Physics A Solids and Surfaces;1984-10
5. Doping of III–V compound semiconductors by ion implantation;Nuclear Instruments and Methods in Physics Research;1983-05
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