Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3202317
Reference55 articles.
1. Electron mobility in modulation-doped AlGaN–GaN heterostructures
2. Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
3. Carrier Confinement in AlGaN/GaN Heterostructures Grown by Plasma Induced Molecular Beam Epitaxy
4. High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor
5. High Al-content AlGaN/GaN MODFETs for ultrahigh performance
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