Reduction of the effective height of metal–n‐InP Schottky barriers using thin epitaxial layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89395
Reference4 articles.
1. Au - (n-type) InP Schottky barriers and their use in determining majority carrier concentrations in n-type InP
2. Reducing the effective height of a Schottky barrier using low‐energy ion implantation
3. Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers
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1. Recent advances in Schottky barrier concepts;Materials Science and Engineering: R: Reports;2001-11
2. Dichroic display technology potentials and limitations;Materials Chemistry and Physics;1996-03
3. Fabrication and Characterization of Metal-Semiconductor Schottky Barrier Junctions;Metal-Semiconductor Schottky Barrier Junctions and Their Applications;1984
4. Material reactions and barrier height variations in sintered AlInP Schottky diodes;Solid-State Electronics;1979-10
5. Ion‐implantedn‐channel InP metal semiconductor field‐effect transistor;Applied Physics Letters;1978-05
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