Material reactions and barrier height variations in sintered AlInP Schottky diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. InP Schottky-gate field-effect transistors
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1. Well-Patterned Metal-Semiconductor Interface Improving Contact Conductance;Journal of Nanoscience and Nanotechnology;2012-10-01
2. Caractérisation électronique d'interfaces profondes Al-InP;Revue de Physique Appliquée;1989
3. Thermal dissociation of InP covered with metallic contact layers;Thin Solid Films;1986-11
4. The interaction of Al, Mn, and Ag with clean and oxidized GaAs and InP(110) surfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1986-07
5. Semiconductor analysis using organic‐on‐inorganic contact barriers. I. Theory of the effects of surface states on diode potential and ac admittance;Journal of Applied Physics;1986-01-15
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