The interaction of Al, Mn, and Ag with clean and oxidized GaAs and InP(110) surfaces

Author:

Williams R. H.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Metals on Semiconductors;Surfaces and Interfaces of Electronic Materials;2012-12-28

2. XPS and STM study of Mn incorporation on the GaAs(001) surface;Superlattices and Microstructures;2009-07

3. The electrical properties of metal-oxide-semiconductor devices fabricated on the chemically etched n-InP substrate;Applied Surface Science;2007-05

4. Nonequilibrium phases in epitaxial Mn∕GaAs interfacial reactions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

5. Spontaneous growth of arsenic oxide micro-crystals on chemically etched MnAs surfaces;Applied Physics A: Materials Science & Processing;2003-03-01

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