Au - (n-type) InP Schottky barriers and their use in determining majority carrier concentrations in n-type InP
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/6/i=11/a=310/pdf
Reference4 articles.
1. Measurement of carrier-concentration profiles in epitaxial indium phosphide
2. The physics of Schottky barriers
3. Near Ideal Au‐GaP Schottky Diodes
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2. Variation in the effective richardson constant of metal—GaAs and Metal—InP contacts due to the effect of processing parameters;Physica Status Solidi (a);1993-11-16
3. Schottky Contacts on n-InP Surface Treated by Plasma-Induced Oxygen Radicals;Japanese Journal of Applied Physics;1986-11-20
4. Acceptorlike electron traps and thermally reversible barrier heights for Al on UHV‐cleaved (110) InP;Journal of Applied Physics;1985-10-15
5. Electrical study of Schottky barrier heights on atomically clean and air‐exposedn‐InP(110) surfaces;Applied Physics Letters;1985-06-15
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