Comparative study of silicon nitride encapsulated and phosphine overpressure annealing on the interdiffusion of InxGa1−xAs‐InxGa1−xAsyP1−y heterostructures-Reference-Cited by-同舟云学术

Comparative study of silicon nitride encapsulated and phosphine overpressure annealing on the interdiffusion of InxGa1−xAs‐InxGa1−xAsyP1−y heterostructures

Published:1995-02-15 Issue:4 Volume:77 Page:1463-1465
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gillin W. P.,Perrin S. D.,Homewood K. P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.358893

Reference6 articles.

1. Vacancy controlled interdiffusion of the group V sublattice in strained InGaAs/InGaAsP quantum wells

2. Interdiffusion of the group-III sublattice in In-Ga-As-P/In-Ga-As-P and In-Ga-As/In-Ga-As heterostructures

3. The effects of ion implantation on the interdiffusion coefficients in InxGa1−xAs/GaAs quantum well structures

4. Band lineups and deformation potentials in the model-solid theory

5. Heterojunction band offsets and effective masses in III-V quaternary alloys

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct measurement of the inter-diffusion in quantum wells enhanced by group V intermixing for InP- based structures;2006 Conference on Optoelectronic and Microelectronic Materials and Devices;2006-12

2. Effect of strain on the interdiffusion of InGaAs/GaAs heterostructures;Journal of Applied Physics;1999-01-15

3. Interdiffusion in GaAs(1-x)Sbx/GaAs superlattices studied with high-resolution x-ray diffraction and secondary ion mass spectroscopy;Journal of Applied Physics;1998-09

4. Compositional intermixing enhancement in InGaAs(P)/InP quantum well heterostructures related to lateral composition modulation;Semiconductor Science and Technology;1998-07-01

5. The activation energy for GaAs/AlGaAs interdiffusion;Journal of Applied Physics;1997-11-15