The activation energy for GaAs/AlGaAs interdiffusion
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366345
Reference23 articles.
1. The role of excess arsenic in interface mixing in low‐temperature‐grown AlAs/GaAs superlattices
2. Al–Ga interdiffusion, carbon acceptor diffusion, and hole reduction in carbon‐doped Al0.4Ga0.6As/GaAs superlattices: The As4pressure effect
3. Comparative study of silicon nitride encapsulated and phosphine overpressure annealing on the interdiffusion of InxGa1−xAs‐InxGa1−xAsyP1−y heterostructures
4. Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth
5. The effects of ion implantation on the interdiffusion coefficients in InxGa1−xAs/GaAs quantum well structures
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