Effect of strain on the interdiffusion of InGaAs/GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369160
Reference10 articles.
1. Thermal relaxation of pseudomorphic Si‐Ge superlattices by enhanced diffusion and dislocation multiplication
2. Ion scattering studies of diffusion and strain relaxation in Si/Si1−xGex, superlattices
3. Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth
4. The effects of ion implantation on the interdiffusion coefficients in InxGa1−xAs/GaAs quantum well structures
5. The effects of silicon and beryllium on the interdiffusion of GaAs/ AlxGa1−xAs and InxGa1−xAs/GaAs quantum well structures
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3. Effects of strain on the optoelectronic properties of annealed InGaAs/GaAs self-assembled quantum dots;Semiconductor Science and Technology;2014-05-16
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