Performances and limitations of InAs∕InAlAs metamorphic heterostructures on InP for high mobility devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2000338
Reference11 articles.
1. Interface roughness scattering in InAs/AlSb quantum wells
2. Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations
3. Buffer-dependent mobility and morphology of quantum wells
4. Magnetotransport properties of two-dimensional electron gas in AlSb∕InAs quantum well structures designed for device applications
5. Electrical properties of modulation-doped In[sub x]Al[sub 1−x]As/In[sub y]Ga[sub 1−y]As structures on GaAs and InP substrates with 0.2≤x, y≤0.8
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