Magnetotransport properties of two-dimensional electron gas in AlSb∕InAs quantum well structures designed for device applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1792385
Reference24 articles.
1. AlSb/InAs HEMT's for low-voltage, high-speed applications
2. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes
3. Electronic analog of the electro‐optic modulator
4. Spin injection into ballistic layers and resistance modulation in spin field-effect transistors
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1. Influence of the quantum well dielectric permittivity on the two-dimensional plasmon-phonon;Physica Scripta;2023-05-03
2. Controlling Fermi level pinning in near-surface InAs quantum wells;Applied Physics Letters;2022-08-29
3. Ga composition effects on the electrical parameters of (Al,Ga)Sb/InAs two-dimensional electron gas;Semiconductor Science and Technology;2020-12-04
4. Spin transport at a Pt/InAs quantum well interface using spin Hall and Rashba effects;Applied Physics Letters;2020-07-27
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