Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices

Author:

Do Huy Binh1ORCID,Luc Quang Ho1,Ha Minh Thien Huu1ORCID,Huynh Sa Hoang1ORCID,Nguyen Tuan Anh1,Lin Yueh Chin1,Chang Edward Yi123

Affiliation:

1. Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan

2. Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan

3. International College of Semiconductor Technology, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan

Funder

Chung-Shan Institute of Science and Technology (Chung-Shan Institute of Science and Technology in Taiwan)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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