Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices-Reference-Cited by-同舟云学术

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Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices

Published:2017-08 Issue:8 Volume:7 Page:085208
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Do Huy Binh¹^ORCID,Luc Quang Ho¹,Ha Minh Thien Huu¹^ORCID,Huynh Sa Hoang¹^ORCID,Nguyen Tuan Anh¹,Lin Yueh Chin¹,Chang Edward Yi¹²³

Affiliation:

1. Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan

2. Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan

3. International College of Semiconductor Technology, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan

Funder

Chung-Shan Institute of Science and Technology (Chung-Shan Institute of Science and Technology in Taiwan)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4986147

Reference27 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. An Ultrafast Switchable Terahertz Polarization Modulator Based on III–V Semiconductor Nanowires

3. InxGa1-xAs Nanowires on Silicon: One-Dimensional Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics

4. III–V Nanowire Transistors for Low-Power Logic Applications: A Review and Outlook

5. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

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1. Multi-level forming-free HfO₂-based ReRAM for energy-efficient computing;2024 Device Research Conference (DRC);2024-06-24

2. Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs;Micromachines;2023-08-15

3. Work function of van der Waals topological semimetals: Experiment and theory;Applied Physics Letters;2022-02-28

4. Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks;Journal of Applied Physics;2018-12-14

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