Increase in the piezoelectric response of scandium-doped gallium nitride thin films sputtered using a metal interlayer for piezo MEMS-Reference-Cited by-同舟云学术

Increase in the piezoelectric response of scandium-doped gallium nitride thin films sputtered using a metal interlayer for piezo MEMS

Published:2019-01-07 Issue:1 Volume:114 Page:012902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Uehara Masato¹²^ORCID,Mizuno Takaaki³,Aida Yasuhiro³^ORCID,Yamada Hiroshi¹²^ORCID,Umeda Keiichi³,Akiyama Morito¹^ORCID

Affiliation:

1. Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 807-1, Shuku-machi, Tosu, Saga 841-0052, Japan

2. Department of Molecular and Material Sciences, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasugakoen, Kasuga, Fukuoka 816-8580, Japan

3. Murata Manufacturing Co., Ltd., 1-10-1, Higashikotari, Nagaokakyo, Kyoto 617–8555, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5066613

Reference37 articles.

1. Piezoelectric aluminum nitride thin films for microelectromechanical systems

2. Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

3. Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films

4. Gallium Nitride as an Electromechanical Material

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