Radiofrequency performance of hydrogenated diamond MOSFETs with alumina
Author:
Affiliation:
1. National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
Funder
Basic research program of Hebei
National natural science foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5066052
Reference31 articles.
1. Diamond as an electronic material
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5. Enhancement mode metal‐semiconductor field effect transistors using homoepitaxial diamonds
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