Simplified model for inelastic acoustic phonon scattering of holes in Si and Ge
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1388597
Reference12 articles.
1. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
2. Hole transport in strained Si1−xGex alloys on Si1−yGey substrates
3. High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models
4. Valence band structure of Ge/sub x/Si/sub 1-x/ for hole transport calculation
5. A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Computational Study of Geometrical Designs for Source/Drain Contacts to Reduce Parasitic Resistance in Extremely Scaled MOSFETs;IEEE Transactions on Electron Devices;2019-03
2. Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature;IEEE Transactions on Electron Devices;2012-07
3. Symmetry reduction by surface scattering and mobility model for stressed 〈100〉/(001) MOSFETs;2010 International Conference on Simulation of Semiconductor Processes and Devices;2010-09
4. Spin dynamics in semiconductors;Physics Reports;2010-08
5. Hole spin relaxation in [001] strained asymmetric Si/SiGe and Ge/SiGe quantum wells;Physical Review B;2009-10-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3