A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125824
Reference19 articles.
1. Hole drift velocity in silicon
2. A review of some charge transport properties of silicon
3. Drift velocity of electrons and holes and associated anisotropic effects in silicon
4. High‐field transport of holes in silicon
5. Electron drift velocity in silicon
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