Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions-Reference-Cited by-同舟云学术

Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions

Published:2018-01-03 Issue:3 Volume:97 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kanasaki Jun'ichi,Tanimura Hiroshi,Tanimura Katsumi,Ries Philip,Heckel Wolfgang,Biedermann Kerstin,Fauster Thomas

Funder

Japan Society for the Promotion of Science

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.97.035201/fulltext

Reference38 articles.

1. Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures

2. Theory of ultrafast phenomena in photoexcited semiconductors

3. Femtosecond spectroscopy in semiconductors: a key to coherences, correlations and quantum kinetics

4. Ultrafast carrier dynamics in semiconductor nanowires

5. Ultrafast Carrier Relaxation in Si Studied by Time-Resolved Two-Photon Photoemission Spectroscopy: Intravalley Scattering and Energy Relaxation of Hot Electrons

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