Determination of band diagram for a p-n junction between Mott insulator LaMnO3 and band insulator Nb:SrTiO3-Reference-Cited by-同舟云学术

Determination of band diagram for a p-n junction between Mott insulator LaMnO3 and band insulator Nb:SrTiO3

Published:2015-02-09 Issue:6 Volume:106 Page:061605
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kitamura M.¹²,Kobayashi M.²,Sakai E.²,Takahashi R.³,Lippmaa M.³,Horiba K.²,Fujioka H.¹,Kumigashira H.²

Affiliation:

1. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

2. Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba, Ibaraki 305-0801, Japan

3. Insutitute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 227-8581, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4908570

Reference28 articles.

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2. Engineered Interface of Magnetic Oxides

3. Electric field effect in correlated oxide systems

4. Collective bulk carrier delocalization driven by electrostatic surface charge accumulation

5. Electric field control of the LaAlO3/SrTiO3 interface ground state

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