Engineered Interface of Magnetic Oxides-Reference-Cited by-同舟云学术

Engineered Interface of Magnetic Oxides

Published:2004-07-30 Issue:5684 Volume:305 Page:646-648
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Yamada Hiroyuki¹²³⁴⁵,Ogawa Yoshihiro¹²³⁴⁵,Ishii Yuji¹²³⁴⁵,Sato Hiroshi¹²³⁴⁵,Kawasaki Masashi¹²³⁴⁵,Akoh Hiroshi¹²³⁴⁵,Tokura Yoshinori¹²³⁴⁵

Affiliation:

1. Correlated Electron Research Center (CERC), National Institute of Advanced Science and Technology (AIST), Tsukuba 305-8562, Japan.

2. Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Tsukuba 305-8562, Japan.

3. Spin Superstructure Project (SSS), Exploratory Research for Advanced Technology (ERATO), Tsukuba 305-8562, Japan.

4. Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.

5. Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan.

Abstract

Interface-selective probing of magnetism is a key issue for the design and realization of spin-electronic junction devices. Here, magnetization-induced second-harmonic generation was used to probe the local magnetic properties at the interface of the perovskite ferromagnet La 0.6 Sr 0.4 MnO 3 with nonmagnetic insulating layers, as used in spin-tunnel junctions. We show that by grading the doping profile on an atomic scale at the interface, robust ferromagnetism can be realized around room temperature. The results should lead to improvements in the performance of spin-tunnel junctions.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference19 articles.

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4. M. Bowenet al., Appl. Phys. Lett.82, 233 (2003).

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