Composite electrode with gate-tunable work function for optoelectronic devices
Author:
Affiliation:
1. Atom Nanoelectronics Inc., 440 Hindry Avenue, Unit E, Inglewood, California 90301, USA
Funder
US Special Operations Command
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4985863
Reference29 articles.
1. Continuous and Precise Work Function Adjustment for Integratable Dual Metal Gate CMOS Technology Using Hf–Mo Binary Alloys
2. Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor
3. An adjustable work function technology using Mo gate for CMOS devices
4. Bilayer metal gate electrodes with tunable work function: Adhesion and interface characterization
5. A Universal Method to Produce Low–Work Function Electrodes for Organic Electronics
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance Improvement of Gate-Tunable Organic Light-Emitting Diodes with Electron-Transport and Hole-Blocking Layers;ACS Applied Electronic Materials;2020-04-01
2. Gate Tunable Organic Light Emitting Diodes: Principles and Prospects;The Chemical Record;2018-08-10
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