Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2188380
Reference11 articles.
1. Physical and electrical properties of metal gate electrodes on HfO[sub 2] gate dielectrics
2. Physical and electrical characterization of polysilicon vs. TiN gate electrodes for HfO2 transistors
3. Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications
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