Real time monitoring of the interaction of Si (100) with atomic hydrogen: The “H-insertion/Si-etching” kinetic model explaining Si surface modifications-Reference-Cited by-同舟云学术

Real time monitoring of the interaction of Si (100) with atomic hydrogen: The “H-insertion/Si-etching” kinetic model explaining Si surface modifications

Published:2009-10-19 Issue:16 Volume:95 Page:161501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bianco Giuseppe V.,Losurdo Maria,Giangregorio Maria M.,Capezzuto Pio,Bruno Giovanni

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3245312

Reference21 articles.

1. Scanning tunnelling microscopy of the interaction of hydrogen with silicon surfaces

2. Hydrogen interaction with clean and modified silicon surfaces

3. Interaction of hydrogen atoms with Si(111) surfaces: Adsorption, abstraction, and etching

4. Hydrogen adsorption and desorption on Si(100) and Si(111) surfaces investigated by in situ surface infrared spectroscopy

5. Si∕SiGe n-type resonant tunneling diodes fabricated using in situ hydrogen cleaning

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