Fast degradation of boron‐doped strained Si(1−x)Gexlayers by 1‐MeV electron irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108970
Reference5 articles.
1. Chapter 4 Group-IV Compounds
2. Structure, properties and applications of GexSi1-xstrained layers and superlattices
3. Evidence of the influence of heavy-doping induced bandgap narrowing on the collector current of strained SiGe-base heterojunction bipolar transistors
4. Influence of Oxygen and Boron on Defect Production in Irradiated Silicon
5. Interstitial Defect Reactions in Silicon
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1. Jan Vanhellemont - 35 years of materials research in microelectronics;physica status solidi (c);2016-06-03
2. Increased Radiation Hardness of Short-Channel Electron-Irradiated Si1-xGexSource/Drain p-Type Metal Oxide Semiconductor Field-Effect Transistors at Higher Ge Content;Japanese Journal of Applied Physics;2013-09-01
3. Deep-level transient spectroscopy study of theEcenter inn−Siand partially relaxedn−Si0.9Ge0.1alloy layers;Physical Review B;2008-01-30
4. Displacement Damage in Group IV Semiconductor Materials;Radiation Effects in Advanced Semiconductor Materials and Devices;2002
5. Impact of high energy particle irradiation on the electrical performance of Si1-xGex epitaxial diodes;Journal of Materials Science: Materials in Electronics;1999
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