Deep-level transient spectroscopy study of theEcenter inn−Siand partially relaxedn−Si0.9Ge0.1alloy layers
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.035213/fulltext
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1. SiGe alloys and superlattices for optoelectronics
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3. Degradation of Si1−xGex epitaxial devices by proton irradiation
4. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-ECenter
5. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter
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