Evidence of nanosecond-scale charge injection during domain switching from fast imprint measurements in Pb(Zr,Ti)O3 thin films at low temperatures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3139771
Reference15 articles.
1. Ferroelectric Memories
2. Asymmetry of domain forward switching and multilevel relaxation times of domain backswitching in antiferroelectric Pb0.99Nb0.02(Zr0.84Sn0.12Ti0.04)0.98O3 thin films
3. Nature of nonlinear imprint in ferroelectric films and long-term prediction of polarization loss in ferroelectric memories
4. The interface screening model as origin of imprint in PbZrxTi1−xO3 thin films. I. Dopant, illumination, and bias dependence
5. The interface screening model as origin of imprint in PbZrxTi1−xO3 thin films. II. Numerical simulation and verification
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1. Improvement of Polarization Retention at Low and High Temperatures for Hf₀.₅Zr₀.₅O₂ Thin-Film Capacitors;IEEE Electron Device Letters;2024-07
2. Reversible charge injection in artificially created charged domain wall region;Scripta Materialia;2024-06
3. Polarization retention dependence of imprint time within LiNbO3 single-crystal domain wall devices;Journal of Applied Physics;2022-12-14
4. Fast Operations of Nonvolatile Ferroelectric Domain Wall Memory with Inhibited Space Charge Injection;ACS Applied Materials & Interfaces;2022-07-08
5. Nanosecond Characterization of Regional Domain Imprint from Fast Domain Switching Currents in Pb(Zr,Ti)O 3 Thin Films;Chinese Physics Letters;2016-02
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